Multiple subband occupancy in modulation-doped heterostructuresHARRIS, J. J.Acta electronica. 1988, Vol 28, pp 39-47, issn 0001-558XArticle

Simplified assessment of parallel conduction in modulation-doped heterostructuresHARRIS, J. J.Measurement science & technology (Print). 1991, Vol 2, Num 12, pp 1201-1205, issn 0957-0233Article

Histogenesis of sarcomatoid urothelial carcinoma of the urinary bladder : evidence for a common clonal origin with divergent differentiationSUNG, M.-T; WANG, M; MACLENNAN, G. T et al.Journal of pathology. 2007, Vol 211, Num 4, pp 420-430, issn 0022-3417, 11 p.Article

Evaluation of sapphire substrate heating behaviour using GaN band-gap thermometryHARRIS, J. J; THOMSON, R; TAYLOR, C et al.Journal of crystal growth. 2007, Vol 300, Num 1, pp 194-198, issn 0022-0248, 5 p.Conference Paper

Substrate temperature measurement using a commercial band-edge detection systemFARRER, I; HARRIS, J. J; THOMSON, R et al.Journal of crystal growth. 2007, Vol 301-302, pp 88-92, issn 0022-0248, 5 p.Conference Paper

Phase diagram for the quantum Hall effect in a high-mobility AlGaN/GaN heterostructureHARRIS, J. J; LEE, K. J; MAUDE, D. K et al.Journal of physics. Condensed matter (Print). 2001, Vol 13, Num 8, pp L175-L181, issn 0953-8984Article

Monte Carlo simulation of electron transport in highly delta-doped GaAs/AIGaAs quantum wellsWATLING, J. R; WALKER, A. B; HARRIS, J. J et al.Semiconductor science and technology. 1998, Vol 13, Num 1, pp 43-53, issn 0268-1242Article

Magnetoresistance oscillations due to intersubband scattering in a two-dimensional electron systemSANDER, T. H; HOLMES, S. N; HARRIS, J. J et al.Surface science. 1996, Vol 361-62, Num 1-3, pp 564-568, issn 0039-6028Conference Paper

The unifying role of effective field in the composite fermion model of the fractional quantum Hall effectLEADLEY, D. R; VAN DER BURGT, M; NICHOLAS, R. J et al.Surface science. 1996, Vol 361-62, Num 1-3, pp 22-25, issn 0039-6028Conference Paper

Cyclotron resonance to 100 mK of a GaAs heterojunction in the ultra-quantum limitMICHELS, J. G; HILL, S; WARBURTON, R. J et al.Surface science. 1994, Vol 305, Num 1-3, pp 33-41, issn 0039-6028Conference Paper

Incompressible electron liquid states studies by optical spectroscopyTUBERFIELD, A. J; FORD, R. A; HARRIS, I. N et al.Physical review. B, Condensed matter. 1993, Vol 47, Num 8, pp 4794-4797, issn 0163-1829Article

The lattice locations of silicon atoms in delta-doped layers in GaAsASHWIN, M. J; FAHY, M; HARRIS, J. J et al.Journal of applied physics. 1993, Vol 73, Num 2, pp 633-639, issn 0021-8979Article

Reflection high-energy electron diffraction study of the GaAs:Si:GaAs systemFAHY, M. R; ASHWIN, M. J; HARRIS, J. J et al.Applied physics letters. 1992, Vol 61, Num 15, pp 1805-1807, issn 0003-6951Article

Spatial correlation of occupied DX centres in GaAs and its destruction by thermal and optical excitationDMOWSKI, L. H; GOUTIERS, B; MAUDE, D. K et al.Japanese journal of applied physics. 1992, Vol 32, pp 221-223, issn 0021-4922, SUP1Conference Paper

Wigner solid in random field : rigidity, pinning frequency and conduction thresholdWILLIAMS, F. I. B; DEVILLE, G; GLATTLI, D. C et al.Surface science. 1992, Vol 263, Num 1-3, pp 23-29, issn 0039-6028Conference Paper

High pressure studies of electron mobility in heavily doped GaAs : fitting of the absolute valueDMOWSKI, L; WISNIEWSKI, P; SKIERBISZEWSKI, C et al.Semiconductor science and technology. 1991, Vol 6, Num 10, pp 969-972, issn 0268-1242Article

Far-infrared magneto-optical studies of the polaron effect in low dimensional GaAs-(Ga,Al)As structuresLANGERAK, C. J. G. M; SINGLETON, J; ETIENNE, B et al.Physica scripta. T. 1991, Vol 39, pp 308-313, issn 0281-1847Conference Paper

Optical measurements of correlated states of two dimensional electrons in GaAs at low temperatures and high magnetic fieldsRYAN, J. F; CLARK, R. G; FORD, R. A et al.Physica scripta. T. 1991, Vol 39, pp 223-229, issn 0281-1847Conference Paper

Observation of magnetic excitons and spin waves in activation studies of a two-dimensional electron gasUSHER, A; NICHOLAS, R. J; HARRIS, J. J et al.Physical review. B, Condensed matter. 1990, Vol 41, Num 2, pp 1129-1134, issn 0163-1829Article

Post-growth diffusion of Si in δ-doped GaAs grown by MBEBEALL, R. B; CLEGG, J. B; CASTAGNE, J et al.Semiconductor science and technology. 1989, Vol 4, Num 12, pp 1171-1175, issn 0268-1242, 5 p.Article

Zero-current voltage oscillations in GaAs-AlGaAs heterojunctionsGRASSIE, A. D. C; LAKRIMI, M; HUTCHINGS, K. M et al.Semiconductor science and technology. 1988, Vol 3, Num 10, pp 983-987, issn 0268-1242Article

Silicon doping of MBE-grown GaAs filmsNEAVE, J. H; DOBSON, P. J; HARRIS, J. J et al.Applied physics. A, Solids and surfaces. 1983, Vol 32, Num 4, pp 195-200, issn 0721-7250Article

Bilingual-Bicultural Education: A Legal AnalysisCARTER, D. G; BROWN, F; HARRIS, J. J et al.Education and Urban Society Beverley Hills, Calif. 1978, Vol 10, Num 3, pp 295-304Article

Spin dynamics in nanrrow-gap semiconductor epitaxial layersLITVINENKO, K. L; NIKZAD, L; ALLAM, J et al.Journal of superconductivity and novel magnetism. 2007, Vol 20, Num 6, pp 461-465, issn 1557-1939, 5 p.Conference Paper

Interrelationships of breed type, USDA quality grade, cooking method, and degree of doneness on consumer evaluations of beef in Dallas and San Antonio, Texas, USAMCKENNA, D. R; LORENZEN, C. L; POLLOK, K. D et al.Meat science. 2004, Vol 66, Num 2, pp 399-406, issn 0309-1740, 8 p.Article